{"title":"Junction termination technique for super junction devices","authors":"Y. Bai, A.Q. Huang, X. Li","doi":"10.1109/ISPSD.2000.856820","DOIUrl":null,"url":null,"abstract":"The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"164 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856820","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
The theory of junction termination for super junction devices is proposed in this paper. Using this theory, junction termination techniques for super junction structures are developed that achieve over 95% of the ideal breakdown voltage.
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