Performances optimization of capacitive parallel MEMS switches

Abstract

This paper describes the optimized fabrication of capacitive MEM switch dedicated to both low and high power applications. In order to get a good capacitor ratio, the contact quality of the MEM switch has been optimized. Both metal line roughness and membrane flatness have been investigated. Consequently, insertion losses of 0.13 dB as well as an isolation of 40 dB at 20 GHz have been measured. It corresponds to a 47% contact quality, which is equivalent to those obtained in the state of the art with low power level technologies.