Modeling of radiation-induced single event transients in SOI FinFETS

Abstract

This work presents the transient charge collection induced by energetic particles in sub-100 nm SOI FinFET technologies with the aim of estimating the SEU (Single Event Upset) and MBU (Multiple Event Upset) sensitivities. The estimates are performed with the dynamic charge transport and collection model of the MUSCA SEP3 platform and compared to TCAD simulations. The predictive platform works with a multi-scales modeling and physics-based Monte-Carlo approach and provides the device sensitivity but also investigates evolving technologies and emerging SEE mechanisms.