Impact of the doped areas sizes in the performances of microwave SPST switches integrated in a silicon substrate

R. Allanic, D. Le Berre, Y. Quéré, C. Quendo, D. Chouteau, V. Grimal, D. Valente, J. Billoué
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引用次数: 6

Abstract

This paper deals with the impact of the doped areas sizes on the performances of microwave switches. The RF switches are designed on a silicon substrate in microstrip technology and use semiconductors diodes (N+P junctions) as active elements to commute from the OFF-state to the ON-state. Therefore, the co-design of the microstrip transmission lines and the active elements gives a great design flexibility. The manufacturing process is based on classical steps used to fabricate semiconductor components and this allows to choose the size of the active elements (i.e. the size of the doped areas). Five demonstrators with as many different integrated diode sizes are presented and the size impact on their performances is discussed on the frequency band going from 0.1 GHz to 10 GHz. With a very low bias voltage, the insertion losses are lower than 2 dB and the isolation can be higher than 40 dB.
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掺杂面积大小对集成在硅衬底中的微波SPST开关性能的影响
本文研究了掺杂面积大小对微波开关性能的影响。RF开关采用微带技术设计在硅衬底上,并使用半导体二极管(N+P结)作为有源元件从off状态转换到on状态。因此,微带传输线与有源元件的协同设计为微带传输线的设计提供了很大的灵活性。制造过程基于用于制造半导体元件的经典步骤,这允许选择有源元件的尺寸(即掺杂区域的尺寸)。给出了五种不同集成二极管尺寸的样品,并讨论了尺寸对其在0.1 GHz到10 GHz频段内性能的影响。在极低的偏置电压下,插入损耗低于2 dB,隔离度可高于40 dB。
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