S. Momota, M. Otsuki, K. Ishii, H. Takubo, Y. Seki
{"title":"Analysis on the low current turn-on behavior of IGBT module","authors":"S. Momota, M. Otsuki, K. Ishii, H. Takubo, Y. Seki","doi":"10.1109/ISPSD.2000.856843","DOIUrl":null,"url":null,"abstract":"This paper presents the noise emission mechanism from IGBT module, which is strongly required to be improved because of EMC regulations. The various 600 V/100 A IGBT module structures were experimentally and numerically tested to improve the current ringing during low current turn-on. As a result, it has been found that the parasitic inductance in the module should be as small as possible to suppress RLC resonant, which consists of parasitic components in the module and the capacitance in the power devices. It is also confirmed that the extra capacitance attached between gate-emitter of IGBT effectively improves the noise emission without increase the switching loss.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856843","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
Abstract
This paper presents the noise emission mechanism from IGBT module, which is strongly required to be improved because of EMC regulations. The various 600 V/100 A IGBT module structures were experimentally and numerically tested to improve the current ringing during low current turn-on. As a result, it has been found that the parasitic inductance in the module should be as small as possible to suppress RLC resonant, which consists of parasitic components in the module and the capacitance in the power devices. It is also confirmed that the extra capacitance attached between gate-emitter of IGBT effectively improves the noise emission without increase the switching loss.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
