K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, T. Harada
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引用次数: 76
Abstract
A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT)/CMOS technology with high-quality passive elements, made by using SOI on a high-resistivity substrate (SOI/HRS), was developed. The SiGe HBTs exhibited high-frequency, high-speed capability with f/sub max/ of 180 GHz and a fast ECL-gate delay of 6.7 ps.
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