Heterodimensional field effect transistors for ultra low power applications

Abstract

We describe a new class of field effect transistors (FETs) based on a heterodimensional contact between a three-dimensional gate (metal or semiconductor) and a two-dimensional electron gas. The heterodimensional FET family (2D MESFET, 2DI MESFET, and 2D JFET) has shown significant promise for future high speed, ultra low power applications. We review the recent developments, and report on a new fully ion implanted quasi-heterodimensional FET, the coax-2D JFET.