{"title":"Design and Optimization of ESD P-Direction Diode in Bulk FinFET Technology","authors":"You Li, M. Miao, R. Gauthier","doi":"10.23919/EOS/ESD.2018.8509757","DOIUrl":null,"url":null,"abstract":"We present an ESD P-direction STI diode fabricated in an advanced bulk FinFET technology. The impact on process and design parameters are evaluated in detail. With design optimization, the ESD P-direction STI diode achieves 46% and 16% performance improvement for It2/C and It2/Area relative to the C-direction design.","PeriodicalId":328499,"journal":{"name":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EOS/ESD.2018.8509757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We present an ESD P-direction STI diode fabricated in an advanced bulk FinFET technology. The impact on process and design parameters are evaluated in detail. With design optimization, the ESD P-direction STI diode achieves 46% and 16% performance improvement for It2/C and It2/Area relative to the C-direction design.
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