Jae-Hee Han, S. Lee, A. Berdinsky, J. Yoo, Chong-Yun Park, J. J. Choi, T. Jung, I. Han, J. M. Kim
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引用次数: 0
Abstract
We have directly grown CNTs on the metal substrates by direct-current plasma-enhanced chemical-vapor deposition (DC-PECVD) using a gas mixture of C/sub 2/H/sub 2/ and NH/sub 3/ at relatively low temperature (550 /spl deg/C). In this study, we report field emission properties of CNTs depending on pattern sizes and spacings. Field-emission characteristic of CNTs was evaluated in a vacuum of 10/sup -6/ Torr in a parallel diode configuration. It is found that there is a correlation between pattern morphologies (such as window area, spacing, and dimension of window edge, etc.) and the field-emission properties. Furthermore, we found that the contact resistance between CNTs and substrate is a crucial factor for the saturation of field emission from CNTs.
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