Device synthesis topology for zinc oxide nanowire sensors

Abstract

This paper describes two unique device topologies: single ZnO nanowire and array ZnO nanowire-based devices. Two device topologies have been fabricated and compared for their sensing performance. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.