Power Detector with GaAs Field Effect Transistors

Abstract

A novel power detector for fast power measurements in RF technology is presented. The essential detector elements are field effect transistors. Due to the fact that the field effect transistors are used as passive elements, the detector features an exellent noise characteristic. Beside this, the power detector also shows a low sensitivity to temperature variations. Relating to noise characteristic, temperature stability and dynamic range the field effect detector is better than a Schottky diode detector.