A 6-30 GHz Compact 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes

Hyunchul Eom, Sejun Han, Kyounghoon Yang
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引用次数: 3

Abstract

A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/InGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi- resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the InP/InGaAs PIN diodes having a high cutoff frequency for digital switching, the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47times0.99 mm2.
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采用InP/InGaAs PIN二极管的6- 30ghz紧凑型3位数字衰减器MMIC
提出并制作了一种采用InP/InGaAs PIN二极管的宽带(6- 30ghz) 3位数字衰减器MMIC。该数字衰减器由非反射阶跃衰减的π电阻网络组成,采用基于苯并环丁烯(BCB)的多层MMIC技术制作。采用具有高截止频率的InP/InGaAs PIN二极管进行数字开关,所提出的数字衰减器具有低插入损耗和优异的回波损耗特性。3位数字衰减器具有3 dB衰减步长和21 dB衰减范围。在所有衰减状态和频率下,最小插入损耗为4db,输入/输出回波损耗大于10db。芯片尺寸为1.47 × 0.99 mm2。
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