A GaAs-based 3-40 GHz distributed mixer with cascode FET cells

W. Ko, Y. Kwon
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引用次数: 22

Abstract

A broadband MMIC distributed mixer with cascode FET cells was developed using commercial GaAs PHEMT foundry. The fabricated distributed mixer with a size of 1.8 mm/spl times/1.0 mm showed a high conversion gain of 3.6 dB/spl plusmn/0.5 dB over 3 to 40 GHz RF frequency ranges at the low LO power level of 5 dBm with a fixed IF frequency of 1 GHz. An average single-sideband noise figure was 11.7 dB without IF post amplification. The LO-to-IF and LO-to-RF isolations were better than 19 dB over the entire operating frequency band. To our knowledge, this corresponds to the highest gain-bandwidth product (85 GHz) achieved from the wideband mixers.
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一种基于gaas的3- 40ghz级联场效应晶体管分布式混频器
采用商用砷化镓PHEMT铸造厂,研制了一种带级联场效应晶体管的宽带MMIC分布式混频器。所制备的尺寸为1.8 mm/spl倍/1.0 mm的分布式混频器在3 ~ 40 GHz RF频率范围内,在5 dBm的低LO功率电平和1 GHz的固定中频下,显示出3.6 dB/spl plusmn/0.5 dB的高转换增益。在没有中频后放大的情况下,平均单边带噪声系数为11.7 dB。在整个工作频带内,低电平对中频和低电平对射频的隔离度均优于19 dB。据我们所知,这对应于宽带混频器实现的最高增益带宽产品(85 GHz)。
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