Yan Tian, Zekun Guo, H. Gan, Jun Chen, N. Xu, Fei Liu, S. Deng
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引用次数: 0
Abstract
Due to its potential applications in optoelectric area, WS2/graphene heterojunction attracts much attention in past years. But until now, modulation of their working performance is still a big challenge for the researchers. In this work, WS2/graphene heterojunctions have been sucessfully fabricated on Si substrate. Moreover, their surface configuration were researched by STM and AFM techniques. Finally, they are integrated into back-gated MOSFET devices to research their working performances.
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