{"title":"Direct measurement of thermal circuit parameters using pulsed IV and the normalized difference unit","authors":"C. Baylis, L. Dunleavy, J.E. Daniel","doi":"10.1109/MWSYM.2004.1339211","DOIUrl":null,"url":null,"abstract":"New methods are presented for direct extraction of thermal resistance and capacitance from pulsed IV measurements. Because thermal effects are frequency dependent, a thermal circuit is used in many models to characterize the device channel temperature as a function of frequency. Thermal resistance is determined using pulsed IV data sets taken at varied ambient temperature, while the thermal capacitance is found through use of a new normalized difference unit (NDU) for IV data. Determination of thermal subcircuit parameters from readily available pulsed IV measurements reduces the complexity of electrothermal model development for microwave transistors.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2004.1339211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
New methods are presented for direct extraction of thermal resistance and capacitance from pulsed IV measurements. Because thermal effects are frequency dependent, a thermal circuit is used in many models to characterize the device channel temperature as a function of frequency. Thermal resistance is determined using pulsed IV data sets taken at varied ambient temperature, while the thermal capacitance is found through use of a new normalized difference unit (NDU) for IV data. Determination of thermal subcircuit parameters from readily available pulsed IV measurements reduces the complexity of electrothermal model development for microwave transistors.