Pulsed Infra-Red Microscopy for Debugging Latch-Up on CMOS Products

N. Khurana
{"title":"Pulsed Infra-Red Microscopy for Debugging Latch-Up on CMOS Products","authors":"N. Khurana","doi":"10.1109/IRPS.1984.362029","DOIUrl":null,"url":null,"abstract":"A Near Infra Red Microscope has been used to debug latch-up problems on CMOS products. The microscope is used to image the recombination radiaton emitted by the forward biased junctions in SCR latch-up. If latchup occurrs at one location it will spread like a cancer untill several sites have latched up. This causes the traditional heat sensing techniques to give incorrect results. Techniques were developed to view and understand the mechanisms which cause latch-up spreading. Various kinds of I/O latch-up modes have been studied and described.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

Abstract

A Near Infra Red Microscope has been used to debug latch-up problems on CMOS products. The microscope is used to image the recombination radiaton emitted by the forward biased junctions in SCR latch-up. If latchup occurrs at one location it will spread like a cancer untill several sites have latched up. This causes the traditional heat sensing techniques to give incorrect results. Techniques were developed to view and understand the mechanisms which cause latch-up spreading. Various kinds of I/O latch-up modes have been studied and described.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于CMOS产品锁存器调试的脉冲红外显微镜
采用近红外显微镜对CMOS产品的锁存问题进行了调试。利用显微镜对可控硅锁存中正向偏置结发出的复合辐射进行成像。如果闭锁发生在一个地方,它就会像癌症一样扩散,直到几个地方都闭锁。这导致传统的热感测技术给出不正确的结果。人们开发了一些技术来观察和理解导致闭锁扩散的机制。对各种I/O锁存模式进行了研究和描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electromigration Study of the Al-Cu/Ti/Al-Cu System Lifetime of Bonded Contacts on Thin Film Metallizations Characteristics & Reliability of 100Å Oxides Epoxy Degradation Induced Au-Al Intermetallic Void Formation in Plastic Encapsulated MOS Memories Sputtered Ti-Doped Al-Si for Enhanced Interconnect Reliability
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1