Temperature dependence of the ordinary Hall effect in ferrimagnetic Co83Gd17 thin films

Abstract

We systematically study the Hall effects of ferrimagnetic Co83Gd17 thin films with the thicknesses t from 5 to 160 nm. We find that the ordinary Hall coefficient is significantly affected by thickness and temperature. With increasing temperature from 10 to 300 K, for large thickness i.e. t = 160 nm the value of ordinary Hall coefficient is always positive and gradually increases. However, for small thickness i.e. t = 10 nm the value of ordinaiy Hall coefficient is suddenly changed sign from +5.4×10-5 to -2.6×10-3 cm3/C at 140 K By analyzing the resistivity of Co83Gd17 as a function of temperature, the ordinary Hall Effect with respect to the thickness can be explained by the influence of boundary scattering on the relaxation rate of carriers and different dominant carriers with the changing temperature in the amorphous films.