Chia-Yuan Chang, E. Chang, Y. Lien, Y. Miyamoto, Szu-Hung Chen, L. Chu
{"title":"High-Performance In0.52Al0.48As/In0.6Ga0.4As Power Metamorphic HEMT for Ka-Band Applications","authors":"Chia-Yuan Chang, E. Chang, Y. Lien, Y. Miyamoto, Szu-Hung Chen, L. Chu","doi":"10.1109/SMELEC.2006.381095","DOIUrl":null,"url":null,"abstract":"A 70-nm In0.52Al0.48As/In0.6Ga0.4 power MHEMT with double delta-doping was fabricated and evaluated. The device has a high transconductance of 827 mS/mni. The saturated drain-source current of the device is 890 niA/mm. A current gain cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fmax ) of 300 GHz were achieved due to the nanometer gate length and the high Indium content in the channel. When measured at 32 GHz, the 4 times 40 mum device demonstrates a maximum output power of 14.5 dBm with PldB of 11.1 dBm and the power gain is 9.5 dB. The excellent DC and RF performance of the 70-nm MHEMT shows a great potential for Ka-band power applications.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.381095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 70-nm In0.52Al0.48As/In0.6Ga0.4 power MHEMT with double delta-doping was fabricated and evaluated. The device has a high transconductance of 827 mS/mni. The saturated drain-source current of the device is 890 niA/mm. A current gain cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fmax ) of 300 GHz were achieved due to the nanometer gate length and the high Indium content in the channel. When measured at 32 GHz, the 4 times 40 mum device demonstrates a maximum output power of 14.5 dBm with PldB of 11.1 dBm and the power gain is 9.5 dB. The excellent DC and RF performance of the 70-nm MHEMT shows a great potential for Ka-band power applications.
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