M. Musa, M. H. Mamat, M. H. Abdullah, M. F. Malek, A. Nor, N. A. Rasheid, U. Noor, M. Rusop
{"title":"A modified sol-gel method for preparing nanostructured Nb-doped TiO2 DSSC photoanode","authors":"M. Musa, M. H. Mamat, M. H. Abdullah, M. F. Malek, A. Nor, N. A. Rasheid, U. Noor, M. Rusop","doi":"10.1109/SHUSER.2012.6268896","DOIUrl":null,"url":null,"abstract":"Nb-doped TiO2 thin films have been successfully prepared using liquid phase solution method. For the first time, Nb-doped sol-gel has been combined with commercially available TiO2 nanopowder (Degussa P25) for preparing Nb-doped TiO2 photoanode for DSSC application. EDX analysis confirms the presence of Nb in the thin films. Nb-doped TiO2 sample showed improvement in term of electrical resistivity characteristic compared to undoped sample with 8.0 at% Nb-doped sample having the lowest resistivity value. When utilized as photoanode in DSSC, the energy conversion efficiency showed an improvement of 81.3% compared to the undoped one.","PeriodicalId":426671,"journal":{"name":"2012 IEEE Symposium on Humanities, Science and Engineering Research","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Symposium on Humanities, Science and Engineering Research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SHUSER.2012.6268896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Nb-doped TiO2 thin films have been successfully prepared using liquid phase solution method. For the first time, Nb-doped sol-gel has been combined with commercially available TiO2 nanopowder (Degussa P25) for preparing Nb-doped TiO2 photoanode for DSSC application. EDX analysis confirms the presence of Nb in the thin films. Nb-doped TiO2 sample showed improvement in term of electrical resistivity characteristic compared to undoped sample with 8.0 at% Nb-doped sample having the lowest resistivity value. When utilized as photoanode in DSSC, the energy conversion efficiency showed an improvement of 81.3% compared to the undoped one.