Q. Zou, D. Lee, F. Bi, R. Ruby, M. Small, S. Ortiz, Y. Oshmyansky, J. Kaitila
{"title":"High coupling coefficient Temperature compensated FBAR resonator for oscillator application with wide pulling range","authors":"Q. Zou, D. Lee, F. Bi, R. Ruby, M. Small, S. Ortiz, Y. Oshmyansky, J. Kaitila","doi":"10.1109/FREQ.2010.5556250","DOIUrl":null,"url":null,"abstract":"This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt<sup>2</sup>. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt<sup>2</sup> of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt<sup>2</sup> as high as 5.6% and linear TCF of −6 ppm/°C. Significant Kt<sup>2</sup> improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt<sup>2</sup>). High Kt<sup>2</sup> TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2010.5556250","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25
Abstract
This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt2. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt2 of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack design 1.5GHz TempCo FBAR resonator has Kt2 as high as 5.6% and linear TCF of −6 ppm/°C. Significant Kt2 improvement comes from optimal design of stack film, interposer electrode effect and novel process development of a sealant for the oxide to protect it from HF etching. This paper also discusses the trade-off between two parameters (linear TCF vs. Kt2). High Kt2 TempCo FBAR resonator is ideal for FBAR oscillator application with wide frequency pulling range.