{"title":"Dynamic and Noise Performances of the Nothing On Insulator Device","authors":"C. Ravariu, Avireni Srinivasulu, D. Mihaiescu","doi":"10.1109/ICONC345789.2020.9117531","DOIUrl":null,"url":null,"abstract":"This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICONC345789.2020.9117531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.
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