An experimental analysis of spot defects in SRAMs: realistic fault models and tests

S. Hamdioui, A. V. Goor
{"title":"An experimental analysis of spot defects in SRAMs: realistic fault models and tests","authors":"S. Hamdioui, A. V. Goor","doi":"10.1109/ATS.2000.893615","DOIUrl":null,"url":null,"abstract":"In this paper a complete analysis of spot defects in industrial SRAMs will be presented. All possible defects are simulated, and the resulting electrical faults are transformed into functional fault models. The existence of the usually used theoretical memory fault models will be verified and new ones will be presented. Finally, a new march test detecting all realistic faults, with a test length of 14n, will be introduced, and its fault coverage is compared with other known tests.","PeriodicalId":403864,"journal":{"name":"Proceedings of the Ninth Asian Test Symposium","volume":"442 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"127","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Ninth Asian Test Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2000.893615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 127

Abstract

In this paper a complete analysis of spot defects in industrial SRAMs will be presented. All possible defects are simulated, and the resulting electrical faults are transformed into functional fault models. The existence of the usually used theoretical memory fault models will be verified and new ones will be presented. Finally, a new march test detecting all realistic faults, with a test length of 14n, will be introduced, and its fault coverage is compared with other known tests.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
sram中斑点缺陷的实验分析:现实故障模型和测试
本文将全面分析工业固态存储器中的斑点缺陷。模拟所有可能的缺陷,并将产生的电气故障转换为功能故障模型。将验证常用的理论记忆故障模型的存在性,并提出新的理论记忆故障模型。最后,介绍了一种新的全故障行军测试,测试长度为14n,并将其故障覆盖率与其他已知测试进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Distribution-graph based approach and extended tree growing technique in power-constrained block-test scheduling Is IDDQ testing not applicable for deep submicron VLSI in year 2011? Efficient built-in self-test algorithm for memory A methodology for fault model development for hierarchical linear systems TOF: a tool for test pattern generation optimization of an FPGA application oriented test
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1