Electronic structure of quantum dots in (111) direction

Zhao Wei, Yuan ZhongYuan, L. Yumin
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Abstract

This paper presents electronic structure of InAs/GaAs quantum dots in (111) direction. The cubic and truncated pyramidal shaped quantum dots are adopted. The electronic energy levels are calculated by solving a three-dimensional effective mass Shrödinger equation including a strain modified confinement potential and piezoelectric effects.
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(111)方向上量子点的电子结构
本文给出了InAs/GaAs量子点在(111)方向上的电子结构。采用立方量子点和截断金字塔形量子点。通过求解包含应变修正约束势和压电效应的三维有效质量Shrödinger方程来计算电子能级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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