Do-Chan Choi, Young-Rae Kim, Gi-Won Cha, Jae-Hyeong Lee, Sang-Bo Lee, Keum-Yong Kim, E. Haq, Dong-Soo Jun, Kyupil Lee, Sooin Cho, Jong-Woo Park, Hyung-Kyu Lim
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引用次数: 6
Abstract
with wide operating voltage range of 1.8~ to 3.6~ for battery based portable applications. Low power during data retention is obtained with Vcc and temperature variable self refresh which is programmable after packaging using electrical fuses. High performance is achieved at low voltage with dual VPPs for well bias and on-chip high voltage power supply, dual threshold voltages for NMOS and voltage variable sensing control. The 16M has a measured RAS access time of 58ns at 1.8~ and 83°C. This paper describes a I6M DRAM
具有宽工作电压范围1.8~ 3.6~为电池为基础的便携式应用。在数据保留期间，通过Vcc和温度可变自刷新获得低功耗，该自刷新在使用保险丝包装后可编程。在低电压下实现高性能，双电压点用于井偏置和片上高压电源，双阈值电压用于NMOS和电压可变传感控制。16M在1.8~ 83°C下的RAS存取时间为58ns。本文介绍了一种I6M DRAM
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