Column-selection-enabled 8T SRAM array with ∼1R/1W multi-port operation for DVFS-enabled processors

S. P. Park, Soo Youn Kim, Dongsoo Lee, Jae-Joon Kim, W. P. Griffin, K. Roy
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引用次数: 17

Abstract

In this work, we propose a new multi-port 8T SRAM architecture suitable for DVFS enabled processors. With multi-way caches using 8T SRAM, write-back operations are required to support column selection. While conventional write-back schemes may not have the 1R/1W dual port advantage of 8T SRAM, our proposed local write-back scheme preserves both ports with only minimal limitations. Simulation results show significant IPC enhancements with the proposed cache. Implementation in 45nm technology demonstrates wide-range DVFS (from 120MHZ@0.48V to 710MHz@1V) for the proposed SRAM array.
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支持列选择的8T SRAM阵列,具有1R/1W多端口操作,适用于支持dvfs的处理器
在这项工作中,我们提出了一种新的多端口8T SRAM架构,适用于支持DVFS的处理器。对于使用8T SRAM的多路缓存,需要回写操作来支持列选择。虽然传统的回写方案可能没有8T SRAM的1R/1W双端口优势,但我们提出的本地回写方案保留了两个端口,只有最小的限制。仿真结果表明,所提出的缓存显著提高了IPC性能。45纳米技术的实现展示了SRAM阵列的大范围DVFS(从120MHZ@0.48V到710MHz@1V)。
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