{"title":"An analytical estimation model for the spreading resistance of Double-Gate FinFETs","authors":"C. Malheiro, A. S. N. Pereira, R. Giacomini","doi":"10.1109/ICCDCS.2012.6188945","DOIUrl":null,"url":null,"abstract":"The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.
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