An Equivalent-Circuit Model of Planar GaAs Schottky Diode for Terahertz Application

Abstract

In this paper, an equivalent-circuit model including detailed parasitic parameters of a planar anti-parallel GaAs Schottky diode is proposed for Terahertz application. The 3D electromagnetic model is established according to the actual geometry of diode to extract diode parameters simultaneously. Combined with empirical equivalent circuit model, equivalent circuit model and 3D electromagnetic model, the parameters of diode can be extracted completely and accurately. These models can be used for the design of terahertz circuits.