Design issues for a radiation-tolerant digital-to-analog converter in a commercial 2.0-/spl mu/m BiCMOS process

J. Ahn, W. T. Holman, peixiong zhao, K. Galloway, D. A. Bryant, P. Calvel, M. Calvet
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引用次数: 3

Abstract

This paper introduces a methodology for using standard commercial processes to design analog integrated circuits that can tolerate the adverse effects of ionizing radiation. First, several devices of various types and sizes were exposed to ionizing radiation and characterized under worst-case biasing conditions with dose rates and maximum total doses as stipulated in circuit specifications. Second, a determination was made as to what types of devices and circuit topologies were best suited for a desired application, given worst-case component parameters. Finally, taking into account the circuit specifications and the expected shifts in device performance, the circuit was designed, simulated, fabricated, and tested. This paper focuses on the design example of a radiation-tolerant 6-bit R-2R ladder digital-to-analog converter (DAC) in a commercial 2.0-/spl mu/m BiCMOS process.
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商业2.0-/spl mu/m BiCMOS工艺中耐辐射数模转换器的设计问题
本文介绍了一种使用标准商业流程来设计能够承受电离辐射不利影响的模拟集成电路的方法。首先,将几种不同类型和尺寸的器件暴露在电离辐射下,并在电路规范中规定的剂量率和最大总剂量的最坏偏置条件下进行了表征。其次,在给定最坏情况下的元件参数,确定哪种类型的器件和电路拓扑最适合所需的应用。最后,考虑电路规格和器件性能的预期变化,对电路进行了设计、模拟、制造和测试。本文重点介绍了商用2.0-/spl mu/m BiCMOS工艺中耐辐射6位R-2R梯形数模转换器(DAC)的设计实例。
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