Random Access Analog Memory (RA2M) for Video Signal Application

Nilanjan Chattaraj, A. Dhar
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引用次数: 3

Abstract

This paper proposes a novel memory architecture, introducing Random Access Analog Memory (RA2M), to store unquantized samples of video signal of maximum 5 MHz bandwidth for storing time duration in order of millisecond by implementing periodic memory refreshing mechanism in it. At 16.5 MHz sampling frequency with 25 frames/s frame rate, this implemented design can store voltage signal sample of up to 200 mV for 40 ms with 8 bit resolution. The proposed architecture contains unit RA2M cell of 250 fF capacitance occupying 21 μm × 21 μm area with 4.1 mW average power dissipation per cell in 0.18 μm standard CMOS fabrication process. The improvement in signal storage time duration into analog memory by introducing periodic memory refreshing mechanism in voltage mode is implemented for the first time. The circuit implementation is based on switched capacitor technique and is compatible with conventional fabrication process. This architecture facilitates random location data accessibility and includes common mode noise rejection by its differential signal implementation.
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随机存取模拟存储器(RA2M)的视频信号应用
本文提出了一种新的存储结构,即随机存取模拟存储器(RA2M),通过在RA2M中实现周期性的存储器刷新机制,存储最大带宽为5mhz的视频信号的非量化采样,以毫秒为单位存储时间。在16.5 MHz采样频率下,以25帧/秒的帧速率,该实现的设计可以以8位分辨率存储高达200 mV的电压信号采样,持续40毫秒。该架构采用0.18 μm标准CMOS工艺,容量为250 fF,面积为21 μm × 21 μm的单元RA2M电池,每个电池平均功耗为4.1 mW。通过引入电压模式下的周期性存储器刷新机制,首次实现了模拟存储器中信号存储时间的改善。该电路的实现基于开关电容技术,与传统的制造工艺兼容。该结构便于随机位置数据访问,并通过其差分信号实现抑制共模噪声。
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