A new approach to improved green emitting II-VI laser diodes

Abstract

The realisation of green semiconductor lasers is the key to new optoelectronic display systems. The ZnCdSSe-system has already proven its potential for laser diodes in the spectral range of 490-540 nm. To achieve commercially relevant lifetimes longer than 400 hours large improvements are however necessary. In this contribution we demonstrate lithium-containing contact structures for the p-side and implantation induced disordering (IID) defined index guiding leading to dramatically improved laser characteristics like largely reduced threshold current density.