SOI technology for high-temperature applications

Abstract

This work investigates and demonstrates the potential of Silicon-On-Insulator (SOI) MOSFETs for high-temperature analog and digital applications. The small area of junctions in SOI/MOS devices reduces the high-temperature leakage currents by as much as 3 to 4 orders of magnitude over regular (bulk) MOS devices. The threshold voltage variation with temperature is 2 to 3 times smaller than in bulk devices, and the output conductance of SOI MOSFETs actually improves as temperature is increased. These properties enable the fabrication of digital and analog SOI/CMOS circuits operating up to over 300 degrees C with little performance degradation. This paper describes the high-temperature performances of small SOI/CMOS circuit blocks such as static and dynamic logic gates, frequency dividers, and operational amplifiers.<>