Dynamical phase transitions on nanoscale

G. Kocsis, F. Márkus
{"title":"Dynamical phase transitions on nanoscale","authors":"G. Kocsis, F. Márkus","doi":"10.1109/THERMINIC.2016.7749067","DOIUrl":null,"url":null,"abstract":"On nanoscale, many transport characteristics of the matter differ from the macroscopic ones as quantum effects play role in the propagation of charge and heat carriers. Extensive research had been conducted to reveal the distinct transport behaviour for charge carriers, however, novel investigations have shown that heat carriers (i.e. phonons) are also subject to new transport phenomena. In the study, we estimated possible propagation modes for the dual phase lag model proposed by Anderson and Tamma with additional boundary effects on propagation of heat carriers in a nanoscale silicon layer. Furthermore, if the heat conductivity coefficient's dependence of size (via Knudsen-number) is taken into consideration then the A-T model predicts new ballistic transport mode along the well-known diffusive behaviour. We were able to confirm the existence of new transport modes for heat carriers in nanoscale systems theoretically. The results are not only important from a physical perspective but can be a ground for several technical developments where heating and cooling of the material is crucial (e.g. microprocessors).","PeriodicalId":143150,"journal":{"name":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THERMINIC.2016.7749067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

On nanoscale, many transport characteristics of the matter differ from the macroscopic ones as quantum effects play role in the propagation of charge and heat carriers. Extensive research had been conducted to reveal the distinct transport behaviour for charge carriers, however, novel investigations have shown that heat carriers (i.e. phonons) are also subject to new transport phenomena. In the study, we estimated possible propagation modes for the dual phase lag model proposed by Anderson and Tamma with additional boundary effects on propagation of heat carriers in a nanoscale silicon layer. Furthermore, if the heat conductivity coefficient's dependence of size (via Knudsen-number) is taken into consideration then the A-T model predicts new ballistic transport mode along the well-known diffusive behaviour. We were able to confirm the existence of new transport modes for heat carriers in nanoscale systems theoretically. The results are not only important from a physical perspective but can be a ground for several technical developments where heating and cooling of the material is crucial (e.g. microprocessors).
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
纳米尺度的动态相变
在纳米尺度上,由于量子效应在电荷和热载体的传播中起作用,物质的许多输运特性与宏观的输运特性不同。大量的研究揭示了载流子的独特输运行为,然而,新的研究表明,热载子(即声子)也受到新的输运现象的影响。在研究中,我们估计了Anderson和Tamma提出的双相位滞后模型的可能传播模式,该模型对热载子在纳米硅层中的传播有附加的边界效应。此外,如果考虑到导热系数对尺寸的依赖(通过克努森数),则A-T模型沿众所周知的扩散行为预测新的弹道输运模式。我们能够从理论上证实纳米级系统中热载体的新输运模式的存在。这些结果不仅从物理角度来看很重要,而且可以为材料的加热和冷却至关重要的几个技术发展奠定基础(例如微处理器)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Mathematical modelling of coupled heat and mass transport into an electronic enclosure Delphi4LED — from measurements to standardized multi-domain compact models of LED: A new European R&D project for predictive and efficient multi-domain modeling and simulation of LEDs at all integration levels along the SSL supply chain Embedded multi-domain LED model for adaptive dimming of streetlighting luminaires Improved method for logi-thermal simulation with temperature dependent signal delay Aging tendencies of power MOSFETs — A reliability testing method combined with thermal performance monitoring
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1