Design and Analysis of Current Starved VCO Targeting SCL 180 nm CMOS Process

C. Shekhar, S. Qureshi
{"title":"Design and Analysis of Current Starved VCO Targeting SCL 180 nm CMOS Process","authors":"C. Shekhar, S. Qureshi","doi":"10.1109/ises.2018.00027","DOIUrl":null,"url":null,"abstract":"This paper presents a low power 5-stage current starved voltage controlled oscillator, designed at 50 MHz. For control voltage varying from 0.4 V to 1.6 V, the oscillator frequency linearly varies from 7 MHz to 105 MHz linearly. At supply voltage of 1.8 V, the circuit is low power (134 µW) in comparison to circuits reported in the literature. It exhibits a phase noise of -101.9 dBc/Hz at 1 MHz offset from 50 MHz carrier frequency. The circuit is designed in SCL 180 nm CMOS process using cadence environment.","PeriodicalId":447663,"journal":{"name":"2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ises.2018.00027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

Abstract

This paper presents a low power 5-stage current starved voltage controlled oscillator, designed at 50 MHz. For control voltage varying from 0.4 V to 1.6 V, the oscillator frequency linearly varies from 7 MHz to 105 MHz linearly. At supply voltage of 1.8 V, the circuit is low power (134 µW) in comparison to circuits reported in the literature. It exhibits a phase noise of -101.9 dBc/Hz at 1 MHz offset from 50 MHz carrier frequency. The circuit is designed in SCL 180 nm CMOS process using cadence environment.
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针对SCL 180nm CMOS工艺的电流饥渴VCO设计与分析
本文提出了一种低功耗5级缺流压控振荡器,设计频率为50mhz。当控制电压从0.4 V到1.6 V变化时,振荡器频率线性变化从7mhz到105mhz。在电源电压为1.8 V时,与文献中报道的电路相比,该电路功耗低(134 μ W)。在50mhz载波频率偏移1mhz时,相位噪声为-101.9 dBc/Hz。该电路采用SCL 180nm CMOS工艺,在cadence环境下设计。
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