{"title":"Characterizing Highly Efficient Millimetre Wave Single Barrier Varactor Multiplier Diodes","authors":"H. Gronqvist, S. Nilsen, A. Rydberg, E. Kollberg","doi":"10.1109/EUMA.1992.335712","DOIUrl":null,"url":null,"abstract":"This paper addresses characterization and design of single barrier varactors (SBV) for multiplier applications. There is an optimum ratio between the maximum and minimum capacitance for the diode used as an multiplier. The embedding impedance requirement is analyzed. Different combinations of epitaxial materials are investigated experimentally and theoretically. It is shown that diodes based on InAs are much more promising than those based on GaAs or GaInAs materials. It is also shown that a tripler using an InAs SBV diode should yield a considerably improved performance over a similarly optimized Schottky diode tripler.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 22nd European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1992.335712","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper addresses characterization and design of single barrier varactors (SBV) for multiplier applications. There is an optimum ratio between the maximum and minimum capacitance for the diode used as an multiplier. The embedding impedance requirement is analyzed. Different combinations of epitaxial materials are investigated experimentally and theoretically. It is shown that diodes based on InAs are much more promising than those based on GaAs or GaInAs materials. It is also shown that a tripler using an InAs SBV diode should yield a considerably improved performance over a similarly optimized Schottky diode tripler.
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