Optical Modulation for High Power Systems: Potential for Electromagnetic-Emission, Loss, and Stress Control by Switching Dynamics Variation of Power Semiconductor Devices
{"title":"Optical Modulation for High Power Systems: Potential for Electromagnetic-Emission, Loss, and Stress Control by Switching Dynamics Variation of Power Semiconductor Devices","authors":"S. Mazumder, T. Sarkar","doi":"10.1109/ENERGY.2008.4781027","DOIUrl":null,"url":null,"abstract":"Dynamic control of electromagnetic-emission, efficiency, and stress of switching power systems using optically-modulated and galvanically isolated gate control of power semiconductor devices (PSDs) is outlined and experimentally demonstrated at a scaled power level. This is achieved by modulating the switching dynamics of a PSD using an optically triggered power transistor (OTPT), which controls the gate excitation of the PSD. An important aspect regarding scalability of the same concept towards higher power application is the controllability of the PSD onset delay (which can be optically modulated, and as demonstrated, in the proposed device concept) particularly for series/parallel connected device configurations for high voltage and current applications.","PeriodicalId":240093,"journal":{"name":"2008 IEEE Energy 2030 Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Energy 2030 Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ENERGY.2008.4781027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Dynamic control of electromagnetic-emission, efficiency, and stress of switching power systems using optically-modulated and galvanically isolated gate control of power semiconductor devices (PSDs) is outlined and experimentally demonstrated at a scaled power level. This is achieved by modulating the switching dynamics of a PSD using an optically triggered power transistor (OTPT), which controls the gate excitation of the PSD. An important aspect regarding scalability of the same concept towards higher power application is the controllability of the PSD onset delay (which can be optically modulated, and as demonstrated, in the proposed device concept) particularly for series/parallel connected device configurations for high voltage and current applications.