{"title":"Far infrared characterization of semiconductor microstructures","authors":"S. Perkowitz","doi":"10.1109/irmm.1987.9127014","DOIUrl":null,"url":null,"abstract":"Intricate semiconductor microstructures require varied methods to examine their properties. Far infrared (FIR) spectroscopy (10–400 cm−1) is contactless and nondestructive. A key to the technique is the simplicity of the FIR superlattice (SL) dielectric function, which at normal incidence is (1)","PeriodicalId":399243,"journal":{"name":"1987 Twelth International Conference on Infrared and Millimeter Waves","volume":"127 18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 Twelth International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/irmm.1987.9127014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Intricate semiconductor microstructures require varied methods to examine their properties. Far infrared (FIR) spectroscopy (10–400 cm−1) is contactless and nondestructive. A key to the technique is the simplicity of the FIR superlattice (SL) dielectric function, which at normal incidence is (1)
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