M. Casalino, L. Sirleto, M. Iodice, M. Gioffré, I. Rendina, G. Coppola
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引用次数: 0
Abstract
We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.
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