Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions

Xi Xiao, Zhiyong Li, Yingtao Hu, Yude Yu, Jinzhong Yu
{"title":"Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions","authors":"Xi Xiao, Zhiyong Li, Yingtao Hu, Yude Yu, Jinzhong Yu","doi":"10.1109/GROUP4.2011.6053816","DOIUrl":null,"url":null,"abstract":"We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×10<sup>17</sup> cm<sup>−3</sup> results in a V<inf>π</inf>L of 0.98 V·cm and a total propagation loss of &#60; 17 dB/cm. 8 GHz modulation bandwidth and ∼ 30 GHz electric RC bandwidth are experimentally demonstrated.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053816","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×1017 cm−3 results in a VπL of 0.98 V·cm and a total propagation loss of < 17 dB/cm. 8 GHz modulation bandwidth and ∼ 30 GHz electric RC bandwidth are experimentally demonstrated.
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交错p-n结容错高速硅微环调制器
我们提出了一种高速硅微环谐振器,具有可容错的交错p-n结。当掺杂浓度为2×1017 cm−3时,VπL为0.98 V·cm,总传播损耗为60;17 dB /厘米。实验证明了8ghz调制带宽和~ 30ghz电RC带宽。
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