{"title":"GaAs semi-insulated-gate FETs (SIGFETs) as high power MMIC control devices","authors":"Y. Yun, R. Gutmann","doi":"10.1109/MWSYM.1988.22199","DOIUrl":null,"url":null,"abstract":"The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<>
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