{"title":"Low temperature carbon nanotube growth on Ni-CaF/sub 2/ 2 coated sodalime glass substrate using thermal CVD method","authors":"Y. Ren, D. Zhu, Dejie Li","doi":"10.1109/IVESC.2004.1414174","DOIUrl":null,"url":null,"abstract":"Our experiments show that carbon nanotubes (CNTs) are inclined to grow at scratched regions of Ni catalyst film on glass substrate with CVD growth method. We also find that CaF/sub 2/ film coated on glass has a rough surface. So CNTs are grown on CaF/sub 2/2 coated sodalime glass using Ni as catalyst. Very low growth temperature of about 440/spl deg/C is achieved. CaF/sub 2/2 interlayer also enhances CNT-glass stickup forces. Investigation of its electron emission property reveals its good potential for FED applications.","PeriodicalId":340787,"journal":{"name":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVESC.2004.1414174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Our experiments show that carbon nanotubes (CNTs) are inclined to grow at scratched regions of Ni catalyst film on glass substrate with CVD growth method. We also find that CaF/sub 2/ film coated on glass has a rough surface. So CNTs are grown on CaF/sub 2/2 coated sodalime glass using Ni as catalyst. Very low growth temperature of about 440/spl deg/C is achieved. CaF/sub 2/2 interlayer also enhances CNT-glass stickup forces. Investigation of its electron emission property reveals its good potential for FED applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
