Correction factors for field emission from a nanoscopic emitter based on ab initio calculation of the electron eigenstates

A. Chatziafratis, J. Xanthakis
{"title":"Correction factors for field emission from a nanoscopic emitter based on ab initio calculation of the electron eigenstates","authors":"A. Chatziafratis, J. Xanthakis","doi":"10.1109/IVNC49440.2020.9203267","DOIUrl":null,"url":null,"abstract":"We have recently calculated the quantized eigenstates of an electron emitter whose form is that of a paraboloid with nanoscopic radius of curvature $\\mathrm{R}$ at the apex. We have used these eigenstates to calculate the emitted current from such a nanoscale emitter. We find that the corresponding Fowler-Nordheim (FN) curves are strongly nonlinear deviating from the well-known behavior predicted by the traditional FN theory. To make our theory easily accessible, we present factors that rectify the original FN equation for the emitted current as a function of known $\\mathrm{R}$., compensating for the quantum confinement effects of high apical curvature. These practical-interest correction factors, however, are derived from exact analytical calculations for electron quantum states inside such a nanoscale emitter tip.","PeriodicalId":292538,"journal":{"name":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 33rd International Vacuum Nanoelectronics Conference (IVNC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC49440.2020.9203267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We have recently calculated the quantized eigenstates of an electron emitter whose form is that of a paraboloid with nanoscopic radius of curvature $\mathrm{R}$ at the apex. We have used these eigenstates to calculate the emitted current from such a nanoscale emitter. We find that the corresponding Fowler-Nordheim (FN) curves are strongly nonlinear deviating from the well-known behavior predicted by the traditional FN theory. To make our theory easily accessible, we present factors that rectify the original FN equation for the emitted current as a function of known $\mathrm{R}$., compensating for the quantum confinement effects of high apical curvature. These practical-interest correction factors, however, are derived from exact analytical calculations for electron quantum states inside such a nanoscale emitter tip.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于电子特征状态的非初始计算的纳米发射器场发射修正系数
我们最近计算了一个电子发射器的量子化特征状态,该发射器的形状是一个顶点曲率半径为 $\mathrm{R}$ 的纳米级抛物面。我们利用这些特征状态来计算这种纳米级发射器的发射电流。我们发现,相应的 Fowler-Nordheim (FN) 曲线具有强烈的非线性,偏离了传统 FN 理论所预测的众所周知的行为。为了使我们的理论易于理解,我们提出了一些因子,将发射电流的原始 FN 方程修正为已知 $\mathrm{R}$ 的函数,以补偿高顶端曲率的量子约束效应。然而,这些具有实际意义的修正系数是通过对这种纳米级发射器尖端内部的电子量子态进行精确分析计算得出的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
First-principles evidence of a constant effective field enhancement factor for carbon nanotube field emitters Non-topographic contrast in constant-current Scanning Field-Emission Microscopy (SFEM) Relative contributions to the emission within bundles of carbon nanocone emitters Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon International Steering Committee (ISC)
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1