M. Tanaka, S. Teramae, Y. Takahashi, T. Takeda, M. Yamaguchi, T. Ogura, T. Tsunoda, S. Nakao
{"title":"600 V trench-gate NPT-IGBT with excellent low on-state voltage","authors":"M. Tanaka, S. Teramae, Y. Takahashi, T. Takeda, M. Yamaguchi, T. Ogura, T. Tsunoda, S. Nakao","doi":"10.1109/ISPSD.2000.856825","DOIUrl":null,"url":null,"abstract":"The 600 V Non-Punch Through (NPT) IGBT which has low on-state voltage (V/sub CE/(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V/sub CE/(sat). By numerical simulation, it has been confirmed that the trade-off relation between V/sub CE/(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low V/sub CE/(sat) of 1.6 V at 180 A/cm/sup 2/ has been realized for the 600 V trench-gate NPT-IGBT.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856825","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
The 600 V Non-Punch Through (NPT) IGBT which has low on-state voltage (V/sub CE/(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V/sub CE/(sat). By numerical simulation, it has been confirmed that the trade-off relation between V/sub CE/(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low V/sub CE/(sat) of 1.6 V at 180 A/cm/sup 2/ has been realized for the 600 V trench-gate NPT-IGBT.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
