{"title":"High efficiency K-band amplifier for on-satellite wireless communication systems","authors":"J. Carroll, R. Flynt, S. Brown","doi":"10.1109/ETS.2000.916521","DOIUrl":null,"url":null,"abstract":"A high efficiency amplifier has been developed for use in K-band communication systems. The 3-stage amplifier achieves an average gain of 28 dB over the frequency range of 17 to 21 GHz. Six volt operation of the amplifier attains 28 dBm of output power at 45% power added efficiency at 19.5 GHz. This is the highest power added efficiency reported to date for a high gain, 3-stage amplifier fabricated with standard production pHEMT processing. Additionally, the amplifier utilizes a highly compact layout using only 3 mm/sup 2/ of GaAs area, which minimizes chip cost in communication systems.","PeriodicalId":291027,"journal":{"name":"2000 IEEE Emerging Technologies Symposium on Broadband, Wireless Internet Access. Digest of Papers (Cat. No.00EX414)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE Emerging Technologies Symposium on Broadband, Wireless Internet Access. Digest of Papers (Cat. No.00EX414)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ETS.2000.916521","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A high efficiency amplifier has been developed for use in K-band communication systems. The 3-stage amplifier achieves an average gain of 28 dB over the frequency range of 17 to 21 GHz. Six volt operation of the amplifier attains 28 dBm of output power at 45% power added efficiency at 19.5 GHz. This is the highest power added efficiency reported to date for a high gain, 3-stage amplifier fabricated with standard production pHEMT processing. Additionally, the amplifier utilizes a highly compact layout using only 3 mm/sup 2/ of GaAs area, which minimizes chip cost in communication systems.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
