A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs

A. Orzati, F. Robin, H. Meier, W. Bachtold
{"title":"A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs","authors":"A. Orzati, F. Robin, H. Meier, W. Bachtold","doi":"10.1109/GAAS.2002.1049042","DOIUrl":null,"url":null,"abstract":"In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion gain of -7.3 dBm for 2 dBm LO power, an LO suppression of 20 dB and an upper-sideband rejection of more than 17 dB. This performance is excellent if compared to the best reported results for InP HEMT resistive mixers.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion gain of -7.3 dBm for 2 dBm LO power, an LO suppression of 20 dB and an upper-sideband rejection of more than 17 dB. This performance is excellent if compared to the best reported results for InP HEMT resistive mixers.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
含InP hemt的16 GHz MMIC阻像混频器
在本文中,我们提出了一种单片集成阻像混频器,该混频器使用16 GHz本振(LO)将1 - 2 GHz频段的信号移动到14 - 15 GHz频段。该电路采用共面波导技术,采用0.2 /spl mu/m InP HEMT内部工艺实现。该电路在2 dBm本振功率下的峰值转换增益为-7.3 dBm,本振抑制为20 dB,上带抑制大于17 dB。如果与InP HEMT电阻混频器的最佳报告结果相比,该性能非常出色。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals Multi-stage G-band (140-220 GHz) InP HBT amplifiers Direct extraction of InGaP/GaAs HBT large signal model Architectural trade-offs for SiGe BiCMOS direct conversion receiver front-ends for IEEE802.11a 1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1