D. Tomaszewski, G. Gluszko, J. Malesinska, K. Domanski, M. Zaborowski, K. Kucharski, D. Szmigiel, A. Sierakowski
{"title":"A simple method for characterization of MOSFET serial resistance asymmetry","authors":"D. Tomaszewski, G. Gluszko, J. Malesinska, K. Domanski, M. Zaborowski, K. Kucharski, D. Szmigiel, A. Sierakowski","doi":"10.1109/ICMTS.2015.7106120","DOIUrl":null,"url":null,"abstract":"A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I-V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I-V characteristics. Based on the measurement data determined for the SOI MOSFETs fabricated in ITE the proposed method has been compared with other techniques.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A method for a direct extraction of individual serial resistances of MOSFET source/drain electrodes is presented. It is based on the device I-V characteristics in a saturation range measured for two device configurations inverted with respect to source and drain electrodes. A threshold voltage necessary for the saturation range modeling is determined from the non-saturation range I-V characteristics. Based on the measurement data determined for the SOI MOSFETs fabricated in ITE the proposed method has been compared with other techniques.
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