H. Unold, M. Kicherer, Safwat W. Z. Mahmoud, R. Jager, R. Michalzik, K. Ebeling
{"title":"Spatially varied anti-resonant DBR design for large-area single-mode VCSELs","authors":"H. Unold, M. Kicherer, Safwat W. Z. Mahmoud, R. Jager, R. Michalzik, K. Ebeling","doi":"10.1109/ISLC.2000.882286","DOIUrl":null,"url":null,"abstract":"The fabricated VCSELs with anti-resonant top DBRs exhibit complete single-mode operation up to 3 mW output power even for large oxide aperture diameters up to 11 μm. The far-field can be described well by the Airy function and the corresponding FWHM angle remains below 5.5° with a variation of only 20% from threshold to roll-over. The combination of completely single-mode operation, low series resistance and a very stable low far-field angle make this type of device the emitter of choice for high-speed data transmission.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The fabricated VCSELs with anti-resonant top DBRs exhibit complete single-mode operation up to 3 mW output power even for large oxide aperture diameters up to 11 μm. The far-field can be described well by the Airy function and the corresponding FWHM angle remains below 5.5° with a variation of only 20% from threshold to roll-over. The combination of completely single-mode operation, low series resistance and a very stable low far-field angle make this type of device the emitter of choice for high-speed data transmission.
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