Detector diodes and test devices fabricated in high resistivity SOI wafers

L. Bosisio, E. Focardi, F. Forti, S. Kashigin, B. Dierickx, D. Wouters, G. Willems, G. Winderickx, I. Debusschere, E. Simoen, C. Claeys, H. Maes, L. Hermans, E. Heijne, P. Jarron, Marnie L Campbell, F. Anghinolfi, P. Aspell, P. Delpierre, D. Sauvage, M. Habrard
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引用次数: 1

Abstract

A novel approach to monolithic pixel detectors based on SOI (silicon-on-insulator) wafers with high-resistivity substrates is being pursued by the CERN RD-19 collaboration. The authors report the results of electrical evaluation measurements performed on the devices fabricated in the substrate. The SOI preparation processes considered (SIMOX and laser or stripheater ZMR) appear to be compatible with the fabrication of detectors of suitable quality in the high-resistivity substrate. With reference to the detecting elements in the substrate, ZMR wafers give very good results. For SIMOX wafers, the main concern seems to be the higher depletion voltage resulting from the increase in effective doping concentration.<>
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用高电阻率SOI晶圆制造的探测二极管和测试装置
CERN RD-19合作正在研究一种基于高电阻率衬底的SOI(绝缘体上硅)晶圆的单片像素探测器的新方法。作者报告了对在衬底上制造的器件进行的电气评估测量的结果。所考虑的SOI制备工艺(SIMOX和激光或剥离器ZMR)似乎与在高电阻率衬底上制造合适质量的探测器兼容。与衬底中的检测元件相比,ZMR晶圆具有很好的检测效果。对于SIMOX晶圆,主要关注的似乎是由于有效掺杂浓度的增加而导致的更高的耗尽电压
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