Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

J. M. Ortiz-Rodríguez, A. Hefner, D. Berning, C. Hood, S. Oleum
{"title":"Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices","authors":"J. M. Ortiz-Rodríguez, A. Hefner, D. Berning, C. Hood, S. Oleum","doi":"10.1109/COMPEL.2006.305630","DOIUrl":null,"url":null,"abstract":"A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows achieving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Workshops on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMPEL.2006.305630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows achieving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高电压高频SiC器件的计算机控制表征
介绍了一种基于软件的高压曲线示踪应用于SiC器件表征。这个灵活的应用程序接口的开发,以定义所需的测试参数,以控制定制的25kv能力的SiC表征试验台的硬件。控制数据采集以获得最佳分辨率,并根据应用功率脉冲的形状通过用户定义的时间间隔计算I-V特性。电压和电流波形显示每个数据点捕获,允许用户观察瞬态效应。此外,该软件允许实现部分或全部这些瞬态波形。所获得的结果显示了新系统的功能和灵活性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Preliminary Investigation of Computer-Aided Schwarz-Christoffel Transformation for Electric Machine Design and Analysis Active Compensation of the Input Filter Capacitor Current in Single-Phase PFC Boost Converters Analysis and Optimization of Switched-Capacitor DC-DC Converters An Assessment of Coupled Inductor Modeling for a Multi-output Flyback Converter Small signal modeling of hysteretic current mode control using the PWM switch model
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1