{"title":"A 4.5-5.8 GHz Differential LC VCO using 0.35 μm SiGe BiCMOS Technology","authors":"O. Esame, I. Tekin, Y. Gurbuz","doi":"10.1109/EMICC.2006.282671","DOIUrl":null,"url":null,"abstract":"In this paper, design and realization of a 4.5-5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with AMS 0.35μm-SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). A linear, 1300 MHz tuning range is measured with on-chip, accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits. Post-layout simulations of the VCO led to -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency of phase noise. The circuit occupies an area of 0.6 mm2, including RF and DC pads","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, design and realization of a 4.5-5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is implemented with AMS 0.35μm-SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). A linear, 1300 MHz tuning range is measured with on-chip, accumulation-mode varactors. Fundamental frequency output power changes between -1.6 dBm and 0.9 dBm, depending on the tuning voltage. The circuit draws 17 mA from 3.3 V supply, including buffer circuits. Post-layout simulations of the VCO led to -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency of phase noise. The circuit occupies an area of 0.6 mm2, including RF and DC pads
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