{"title":"A Dual Low Power 1/2 LSB NL 16b/1Msample/s SAR A/D Converter with on-chip Microcontroller","authors":"K. Leung, K. Leung, D. Holberg","doi":"10.1109/ASSCC.2006.357849","DOIUrl":null,"url":null,"abstract":"A 0.35 mum double-poly CMOS 16 b SAR A/D converter uses self-calibration techniques to obtain frac12 LSB INL. The differential and single-ended THD at 1Msample/s are 101dB and 96 dB, respectively. Each ADC consumes 20 mW at 3 V and occupies 2.9 mm2 active area, resulting in a 0.9 pJ/b FOM. The chip includes 3 ADCs, 2 DACs, 8051-microcontroller, CAN controller, DMA controller, 64 K flash memory and 4 K RAM occupying 26 mm2.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A 0.35 mum double-poly CMOS 16 b SAR A/D converter uses self-calibration techniques to obtain frac12 LSB INL. The differential and single-ended THD at 1Msample/s are 101dB and 96 dB, respectively. Each ADC consumes 20 mW at 3 V and occupies 2.9 mm2 active area, resulting in a 0.9 pJ/b FOM. The chip includes 3 ADCs, 2 DACs, 8051-microcontroller, CAN controller, DMA controller, 64 K flash memory and 4 K RAM occupying 26 mm2.
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